iQPU / UQConnect
iQPU / UQConnect
Register profile — the machine's variant of its architecture
qubit type: hyperfine qubit
gate mechanism: microwave fields coupled through a static magnetic-field gradient, no per-qubit lasers
connectivity: QCCD within a module; UQConnect transfers ions between separate trap modules at 2,424 transfers per second with qubit-loss infidelity below 7e-8
control: chip-integrated microwave; UQLogic and UQConnect delivered as commercial ASICs
control placement: on-chip microwave
readout: fluorescence
gate evidence: no published figure
flags: conflicting qubit counts, no published error rates
Technologies by layer — the machine's cell per layer
| 1 Qubit carrier | Trapped atomic ion · primary ▣ Fig. 3 (the ion-trap microchip modules); §Experimental set-up ✅ hyperfine ion qubits; 'hundreds of ion qubits per large die (>400 mm²)', no benchmarked register size (a 2026 secondary source says 64-qubit QCCD) |
| 2 Encoding | Hyperfine / clock-state qubit · primary ▤ §Preserving qubit coherence (qubit in the S1/2 hyperfine manifold of 171Yb+) ✅ hyperfine qubit (family-determined) |
| 3 Gate mechanism | Electronic microwave gate (ions, laser-free: near-field or static gradient) · primary ▨ ✅ microwave fields coupled through a static magnetic-field gradient, no per-qubit lasers |
| 4 Connectivity / transport | Ion shuttling (QCCD, junctions, grid traps) · primary ▣ Fig. 2 (section of a modular QCCD architecture); §Inter-module ion transport ✅ QCCD ion transport within a module; UQConnect ion transfer between trap modules, 2,424 transfers/s, qubit-loss infidelity <7e-8 (2026) |
| 5 Control | Chip-integrated microwave control (ions) · primary ▨ 🔎 chip-integrated on-chip microwave control; UQLogic and UQConnect delivered as commercial ASICs |
| 6 Readout | |
| 7 Code | |
| 8 Decoder | |
| 9 Interconnect | — (Atlas gap: ∅G-ionmatter) · primary ▣ Fig. 1 (connecting Module A and Module B); §Inter-module ion transport; Methods: DC ion transfer protocol ✅ chip-to-chip matter link: UQConnect physically transfers ions between trap modules, 2,424 transfers/s, loss infidelity <7e-8; not photonic |
| 10 Manufacturing | Ion-trap fabrication (surface-electrode chips; machined 3D blade traps) · primary ▨ 🔎 microchip traps fabricated on a commercial 200 mm foundry line (secondary source) 300 mm CMOS foundry (spins, cryo-CMOS, superconducting wiring) · alternate ▨ 🔎 CMOS-foundry manufacture of trap modules claimed |
Standard records
code rate k/n → 2420 transfers/s · best (inter-module ion transfer)
qubit-loss infidelity below 7e-8 per transfer · 2026 · source
device yield → 1 · best (qubit-loss infidelity 7e-8 per inter-module transfer)
2026 · source
evidence: ✅ 5 / 11