Qolab devices at the IQCC
Qolab devices at the IQCC
Register profile — the machine's variant of its architecture
qubit type: transmon
gate mechanism: tunable coupler
connectivity: not published
control: room-temperature RF
control placement: room-temp
readout: dispersive
gate evidence: no published figure
flags: no published error rates, source not confirmed
Technologies by layer — the machine's cell per layer
| 1 Qubit carrier | |
| 2 Encoding | Bare physical qubit (no encoding) · primary ◌ 🔎 Bare two-level subspace — Computational subspace of an anharmonic oscillator; leakage to |2⟩ is the price. |
| 3 Gate mechanism | |
| 4 Connectivity / transport | |
| 5 Control | Room-temperature electronics + per-qubit coax/flex · primary ▦ §Core Capabilities (direct access to microwave and flux pulses; packaging, wiring, filtering, shielding) 🔎 room-temperature RF (register) |
| 6 Readout | Dispersive microwave readout (+TWPA, Purcell) · primary ▦ §Cryogenic integrated circuits (Josephson photomultipliers + SQUID amplifiers replace TWPAs and circulators) 🔎 dispersive readout (register) |
| 7 Code | |
| 8 Decoder | |
| 9 Interconnect | — none — nothing in this layer ▦ §Component integration (qubit + wiring wafers bonded into a tiling module, capacitively coupled to neighbours) 🔎 monolithic, single module; no interconnect |
| 10 Manufacturing | Superconducting-qubit lithography (Al/AlOx/Al junctions, Nb wiring, 300 mm) · primary ▦ §Window-junction process; SEM figure (a) tilted-angle SEM of the window junction, (b) magnified junction ✅ superconducting fab focus: repeatability, flux-noise reduction, manufacturability 300 mm CMOS foundry (spins, cryo-CMOS, superconducting wiring) · alternate ▦ §Window-junction process (semiconductor-compatible; scales to 300 mm wafers) ✅ manufacturability with advanced semiconductor processes (claimed) |
evidence: ✅ 2 / 11