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Donor spin (P in ²⁸Si) donor

Phosphorus donors placed by STM lithography in enriched silicon-28, the bound electron giving drive and readout, the ³¹P nucleus the long-lived qubit.

Donor spin (P in ²⁸Si)

donor · layer 1 Qubit carrier · demonstrated · since 2012

STM-placed phosphorus atoms; nuclear qubits gated through a shared electron's hyperfine coupling; no foundry path.

Brief →

Key references

[192] H. Edlbauer et al., “An 11-qubit atom processor in silicon,” Nature, vol. 648, no. 8094, p… · 2025
[357] M. Fuechsle et al., “A single-atom transistor,” Nat. Nanotechnol., vol. 7, no. 4, pp. 242–… · 2012

Design space — attributes

(a) carrier affinity
intermediate / carrier-agnostic
(b) time · entangling
1.0 µs · deterministic
(c) readout
spin-to-charge + rf reflectometry · 10 µs · non-destructive · mid-circuit
(d) mobility
static nearest-neighbour wiring
(e) control
low-frequency electrical @ room temperature
(f) error structure
stochastic Pauli
(g) manufacturing
STM hydrogen-resist lithography

Evaluation space — dated attributes

nuclear-spin gates (range reported) → 99.5–99.99%; Bell > 99% (single 99.90(4)% CZ not isolable in the abstract)
defines: error channel · 2025-12 · source

SQC (Australia), founded 2017; the first deterministically placed single-donor device is UNSW/Simmons (2012). ²⁸Si feedstock from ASP Isotopes and DOE/ORNL.

Standard records

T1 relaxation → not published · best
No T1 reported for the P donor electron or nuclear spin; the supplementary gives only readout-limited nuclear lifetimes 2,900 s / 7,900 s · 2014-02 · source [D] ⓘ
T2 coherence (echo/DD) → 36 s · best
28Si:P ionised 31P+ nuclear qubit: T2(DD) = 35.6 s, Hahn 1.75 s, T2* 0.6 s; electron T2(DD) = 0.56 s · 2014-02 · source [D] ⓘ
T2 coherence (echo/DD) → 45 ms · typical
SQC 11-qubit donor register: nuclear T2(Hahn) 3-660 ms (T2* 1-46 ms); electron T2(Hahn) ~350 us, T2* ~20 us · 2025-12 · source [D] ⓘ
1Q gate time → not published · typical
No pi-pulse duration in ns or us is stated in Muhonen 2014 or in the SQC 11-qubit paper; only fidelities are given · 2025-12 · source [D] ⓘ
idle / memory error per round → not published · typical
No donor QEC round has been run; no idle/memory error per round is published · 2025-12 · source [D] ⓘ

Actors & goals — annotations

Used by 1 machine (1 primary · 0 alternate)

↗ its register card · paper / product / press: links that name the machine (attribution checked on 20 Sep 2026)

Pictures

Every picture carries the story of what it shows and its credit line.

Fig. 1 — Figure 1: Single-qubit characteristics of the 11-qubit atom processor. a, Connectivity of nuclear spins (n1n-n9n) and electron spins (e1e and e2e_{2
A six-panel figure: (a) a drawn connectivity graph of nine nuclear spins and two electron spins; (b) a scanning tunnelling micrograph of a silicon surface, with 10 nm scale bar, showing the patterned 4P and 5P donor registers and a single-electron-transistor sensor; (c)–(f) spectroscopy and plots of Rabi oscillations, coherence times and single-qubit benchmarking fidelities. It is Figure 1 of "An 11-qubit atom processor in silicon" by Edlbauer, Wang, Huq and co-authors. Notice the visible atomic rows: phosphorus donors are placed by hydrogen lithography with near-atomic precision. “Fig. 1 — Figure 1: Single-qubit characteristics of the 11-qubit atom processor. a, Connectivity of nuclear spins (n1n-n9n) and electron spins (e1e and…” by Hermann Edlbauer et al., arxiv.org/abs/2506.03567, CC BY 4.0 (creativecommons.org/licenses/by/4.0/)
Fig. 1 — Figure 1: Schematic of the multi-donor qubit and spin readout sensor. a) P donors can be precision placed with ±0.385 0.385 nm accuracy in Si crysta…
A 3D schematic drawing, not a micrograph: two phosphorus donors in silicon holding an electron, surrounded by in-plane gates, source, drain and a single-electron-transistor (SET) charge sensor, plus potential-well sketches of the electron tunnelling to the SET. It is Figure 1 of the arXiv paper "Impact of measurement backaction on nuclear spin qubits in silicon" by S. Monir and co-authors, including M.Y. Simmons and R. Rahman. It illustrates spin-to-charge readout of donor qubits; the caption notes donors placed with +/-0.385 nm accuracy by scanning-tunnelling-microscope lithography. “Fig. 1 — Figure 1: Schematic of the multi-donor qubit and spin readout sensor. a) P donors can be precision placed with ±0.385 0.385 nm accuracy in Si crystal and…” by S. Monir et al., arxiv.org/abs/2310.12656, CC BY 4.0 (creativecommons.org/licenses/by/4.0/)
Fig. 5 — Figure S1: Basic operation of the 11-qubit atom processor via detuning gates. a, Scanning tunneling micrograph showing the core of the atom processo…
A two-panel figure. (a) A real scanning tunnelling micrograph (100 nm scale bar) of the processor core on silicon-28: two patterned gates, a single-electron-transistor (SET) charge sensor and the sites of two donor registers, 4P and 5P (four and five phosphorus atoms), each with one electron (e1, e2); (b) a measured charge-stability map versus the two gate voltages, with charge states, a detuning axis ε and the working point where an antenna drives electron and nuclear spin resonance (ESR, NMR). It is Figure S1 of 'An 11-qubit atom processor in silicon' by Hermann Edlbauer and co-authors. Gate voltages set the electron charge states of these atomically placed donors. “Fig. 5 — Figure S1: Basic operation of the 11-qubit atom processor via detuning gates. a, Scanning tunneling micrograph showing the core of the atom processor with the…” by Hermann Edlbauer et al., arxiv.org/abs/2506.03567, CC BY 4.0 (creativecommons.org/licenses/by/4.0/)
donor · layer 1 Qubit carrier · centrality 4.2 · demonstrated · since 2012 · updated 2026-09-30

Donor spin (P in ²⁸Si)

Phosphorus donors placed by STM lithography in enriched silicon-28, the bound electron giving drive and readout, the ³¹P nucleus the long-lived qubit.

Verdict. Highest published per-gate fidelities in silicon, but a serial atom-by-atom write process and a single practitioner cap the register at eleven qubits with no dated parallelisation scheme.

Key references

Λ = error-suppression factor per code-distance step; QBI = DARPA Quantum Benchmarking Initiative (Stage A concept → B R&D plan → C government V&V); G1–G7 = the report's goal classes (see Actors & economics).

Identity & lineage

A single ³¹P donor placed atom-by-atom in enriched ²⁸Si: the bound electron gives drive and spin-to-charge readout, the spin-1/2 ³¹P nucleus the memory. Nuclear qubits inside a register are gated through their hyperfine coupling to a shared electron; registers are linked by electron exchange D[192]. Kane proposed the architecture in 1998; UNSW's Simmons group built the first deterministically placed single-donor device in 2012 D[357]; SQC, its 2017 spin-out, is the sole operator at device scale as of 4 Sep 2026.
Attributes: natural dopant at engineered placement, static, deterministic entangling near 1 µs; spin-to-charge readout ~10 µs, non-destructive and mid-circuit capable; Pauli error; STM fabrication, no foundry equivalent.

Physics & limits

The qubit is a nucleus, not a confined electron: with no orbital degree of freedom there is no first-order charge-noise coupling — the term that plateaus gate-defined dots at 99.0–99.6%. But every operation routes through the one electron that does couple to charge noise, which is coupler, readout probe and dominant error source at once; the budget is set by electron dephasing during the hyperfine-conditional pulse, not by nuclear coherence. Residual ²⁹Si and the regrown STM interface set that electron's T2. A sharper tip will not move the floor: exchange varies exponentially with separation, so a donor mis-sited by a few nm gives a dead register.

Engineering state of the art

table
year figure who tag+key
2012 first deterministically placed single-donor device UNSW D[357]
2025-12-17 11 qubits (9 nuclear, 2 electron ancilla), gates 99.10–99.99%, Bell to 99.5%, GHZ over eight nuclei SQC D[192]

Dominant term: register size and the electron-mediated gate. The main report's single "99.90% donor nuclear CZ" is not isolable from this work D[192].

The 99.90% donor nuclear-spin CZ fidelity cannot be isolated from [192], whose preprint gives 99.5–99.99% and published version 99.10–99.99%; the fidelity is a range. Not published: a placement yield or cost per donor, from any actor; Firgun Ventures' investment amount, and the split of the A$60 M NRFC total between its two tranches; and any SQC statement on the consequences of IonQ's acquisition of SkyWater.

Manufacturing, materials & supply chain

Serial by construction: one tip, one site, so throughput is qubit-hours, not wafer-hours; no parallel exposure is published. Enriched ²⁸Si is dual-sourced as of 4 Sep 2026 — ASP Isotopes' Pretoria line since 2025-03, US DOE silane at 99.9999% ²⁸Si from 2026-07-16 P[348] — so feedstock is not the constraint. Suppliers: SkyWater for US resonators C[276], Bluefors for cryogenics C[358]. The single point of failure moved in 2026: IonQ closed its ~USD 1.8 B purchase of SkyWater on 2026-07-31 G[19], putting SQC's only named US manufacturing route inside a competitor. Export exposure sits in the feedstock, not the machine: the US rule of 2024-09-06 created Export Control Classification Numbers (ECCNs) for isotopically enriched silicon and germanium — silicon qualifies below 0.08% of the nuclear-spin isotope ²⁹Si — as epitaxial layers (3C907), hydrides such as silane (3C908) and bulk material or oxide (3C909), so qubit-grade ²⁸Si is itself a controlled item; its quantum-computer ECCN, 4A906, starts at 34 qubits and, below 2,000, applies only under a two-qubit (C-NOT) error ceiling set for each size band — out of reach of an eleven-qubit register G[301]. Wiring is not the wall; the write step is.

Role in the stack

Architecture: donor spins in silicon, as its primary carrier. Requires STM hydrogen-resist lithography; provides the carrier for exchange links and spin-to-charge readout; substitutes for gate-defined dots at the cost of the whole process flow. Its clock contribution is not distinctive — µs gates and ~6 µs readout match dot spins, so sum of the syndrome round: gate layers + transport + readout + reset is 7.7 µs against their 8.5 µs, and the real bottleneck is a manufacturing quantity the clock cannot express. Verification: one group, one device, no replication, three inconsistent fidelity framings D[192].

Actors & economics

Who.
| Organisation | Role | Country | What exactly they do | Evidence |
|---|---|---|---|---|
| SQC | developer | Australia | Sole STM donor fabricator, 11-qubit processor | D[192] |
| SkyWater Technology | supplier | USA | Resonators, packaging | C[276] |
| IonQ | supplier | USA | Owns SkyWater since 2026-07-31 | G[19] |

Money. 2025-11-06 · SQC · QBI Stage B award · up to USD 15 M · DARPA · awarded fact. 2026-03-24 and 2026-06-11 · SQC · equity · A$60 M combined · Australia's NRFC · closed fact. 2026-07-31 · IonQ · acquisition of supplier SkyWater · ~USD 1.8 B · closed G[19].

Market & supply chain. No merchant sells an STM placement tool: SQC's asset is know-how, so no second source can be bought. ²⁸Si is the one input with two suppliers P[348]; cost per donor is unpublished. Pays into G2 and G3 on fidelity, not count.

IP & standards. Foundational patents trace to the UNSW/Simmons line; no dated family count from a named database as of 4 Sep 2026.

Roadmaps & track record. SQC (2026-06 · commercial scale by 2033 Rfact · unmet; 11 qubits is the maximum published). It delivers what it publishes, but 2033 presumes a parallelisation scheme absent from the literature — unfalsifiable rather than aggressive.

Strategic reading. If donor spins win, they win as a precision register bolted onto a foundry dot array, and SQC captures little of it: it owns the write process, not the wafer. Acute risk: a competitor owns its US packaging supplier.

Outlook & open questions

Confirm/demote (12–24 months): a device beyond 11 qubits or a dated parallel-write scheme confirms; silence through 2028 demotes this to a physics testbed. Best case 2029: a few dozen donor qubits above 99.5%. Worst case: eleven remains the record. Open: (1) can hydrogen-resist patterning be parallelised; (2) does SkyWater's new owner keep the relationship; (3) does QBI Stage C fund SQC; (4) what is the placement-yield distribution.

References
  1. [19] IonQ, “IonQ Completes Acquisition of SkyWater Technology,” Jul. 31, 2026. [Online]. Available: https://www.ionq.com/news/ionq-completes-acquisition-of-skywater-technology G
  2. [192] H. Edlbauer et al., “An 11-qubit atom processor in silicon,” Nature, vol. 648, no. 8094, pp. 569–575, Dec. 2025, doi: 10.1038/s41586-025-09827-w. arXiv:2506.03567. D
  3. [276] Silicon Quantum Computing, “SkyWater x SQC: Advancing Hybrid Quantum-Classical Computing,” Nov. 20, 2025. [Online]. Available: https://sqc.com/news/skywater-and-sqc-advancing-hybrid-quantum-classical-computing C
  4. [301] US Department of Commerce, Bureau of Industry and Security, “Commerce Control List Additions and Revisions; Implementation of Controls on Advanced Technologies Consistent With Controls Implemented by International Partners,” Federal Register, vol. 89, p. 72926, Sep. 6, 2024. [Online]. Available: https://www.federalregister.gov/documents/2024/09/06/2024-19633/commerce-control-list-additions-and-revisions-implementation-of-controls-on-advanced-technologies G
  5. [348] U.S. Department of Energy, “DOE Advances Domestic Supply of Silicon, Germanium Isotopes for Quantum Computing,” HPCwire, Jul. 16, 2026. [Online]. Available: https://www.hpcwire.com/off-the-wire/doe-advances-domestic-supply-of-silicon-germanium-isotopes-for-quantum-computing/ P
  6. [357] M. Fuechsle et al., “A single-atom transistor,” Nat. Nanotechnol., vol. 7, no. 4, pp. 242–246, Apr. 2012, doi: 10.1038/nnano.2012.21. D
  7. [358] Silicon Quantum Computing, “Silicon Quantum Computing — News,” sqc.com. [Online]. Available: https://sqc.com/news/ C