Rigetti Cepheus-1-108Q
Rigetti Cepheus-1-108Q
Register profile — the machine's variant of its architecture
qubit type: tunable transmon
gate mechanism: tunable couplers within chiplets + inter-module couplers (IMCs); adiabatic CZ ~60 ns
connectivity: square lattice per chiplet tiled to 108 sites, degree <=4
control: room-temperature RF; ABAA junction frequency trimming (the 97.4% targeting-yield figure is not in the cited page)
control placement: room-temp
readout: dispersive (fidelity not in the release)
gate evidence: a published figure (source class not yet tagged)
flags: roadmap date missed
Technologies by layer — the machine's cell per layer
| 1 Qubit carrier | |
| 2 Encoding | Bare physical qubit (no encoding) · primary ◌ 🔎 Bare two-level subspace — Computational subspace of an anharmonic oscillator; leakage to |2⟩ is the price. |
| 3 Gate mechanism | Tunable-coupler CZ / iSWAP · primary ▣ §II.A Design of a floating tunable coupler; Fig. 4 (net qubit-qubit coupling, g=0 point); Fig. 6 (CZ RB on Four-Bump device); §III.C ✅ tunable couplers + inter-module couplers; adiabatic CZ ~60 ns (replaced iSWAP); median 2Q 99.1%, 1Q 99.9% (Apr 2026); prototype CZ 99.9% at 28 ns |
| 4 Connectivity / transport | Static nearest-neighbour lattice · primary ▨ 🔎 square lattice per 9-q chiplet, degree ≤4, tiled to a 108-site lattice |
| 5 Control | Room-temperature electronics + per-qubit coax/flex · primary ▤ §II.B Multi-chip tunable coupler assembly (flux-bias and readout lines integrated into the carrier chip) ✅ room-temperature RF control |
| 6 Readout | Dispersive microwave readout (+TWPA, Purcell) · primary ▤ §II.B (one readout resonator per qubit; readout lines routed through the carrier chip) 🔎 dispersive; readout fidelity and T1/T2 not in the release |
| 7 Code | |
| 8 Decoder | |
| 9 Interconnect | Multi-chip modules / l-couplers (same cryostat) · primary ▣ Fig. 1a-c (Bump-Paddle, Bump-Bump, Four-Bump multi-chip coupler designs on a common carrier chip); Fig. 3 (assembled device); Fig. 5 (coherence with indium bumps); §II.B ✅ twelve 9-q chiplets (3×4 MCM) joined by inter-module couplers; median 2Q 99.8% (9 q) → 99.6% (36 q) → 99.1% (108 q), Apr 2026 |
| 10 Manufacturing | Superconducting-qubit lithography (Al/AlOx/Al junctions, Nb wiring, 300 mm) · primary ▤ §II.C Fabrication (qubit chips by standard lithography on high-resistivity Si; indium bump bonding to carrier) ✅ in-house Fab-1 (Fremont); chiplet MCM — (Atlas gap: ∅G-calib) · alternate ▨ ✅ ABAA (alternating-bias assisted annealing) post-fab JJ frequency targeting, 97.4% success (Aug 2024) |
Standard records
2Q error under full-width parallel operation → 9.00e-3 · typical (median 2Q at 108 q, 99.1%)
Apr 2026 · source
parameter spread → 0.99 · measured fidelity-versus-tiling degradation (99.8% at 9 q, 99.6% at 36 q, 99.1% at 108 q)
the most useful public datum about chiplet scaling · Apr 2026 · source
device yield → 0.974 · best (frequency-targeting success via ABAA)
Aug 2024 · source
evidence: ✅ 6 / 11