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XAPHIRO (QUDORA 50-qubit NFQC prototype for the DLR Quantum Computing Initiative)

QUDORA Technologies

XAPHIRO (QUDORA 50-qubit NFQC prototype for the DLR Quantum Computing Initiative)

QUDORA Technologies · trapped ions · ANNOUNCED (under construction: first ion trapped 4 Jun 2025; >=50 fully functional qubits due by project end 31 Jan 2027; emulator on DLR QCI Connect) (Jun 2025 (first ion); Jan 2027 (project end)) · qubits not published · access: cloud emulator

Register profile — the machine's variant of its architecture

qubit type: hyperfine qubit
gate mechanism: Near-Field Quantum Control microwave gates; CMOS-compatible manufacturing
connectivity: not published
control: chip-integrated microwave near-field control (NFQC); trap at 4 K in a cryostat; NXP CMOS photon detector
control placement: on-chip microwave
readout: fluorescence
gate evidence: no published figure
flags: no hardware, source seen as a snippet only, source not confirmed

Technologies by layer — the machine's cell per layer

1 Qubit carrier
Trapped atomic ion · primary ▣ Fig. 2 (energy levels of 9Be+ at 22.3 mT); §Results and discussion ✅
hyperfine ion qubit; emulator only, no hardware results
2 Encoding
Hyperfine / clock-state qubit · primary ▣ Fig. 2 (9Be+ hyperfine levels; field-independent |1,1>-|2,1> qubit at 22.3 mT) ✅
hyperfine qubit (family-determined)
3 Gate mechanism
Electronic microwave gate (ions, laser-free: near-field or static gradient) · primary ▣ Fig. 1 (electrode configuration with embedded microwave conductor); Fig. 3 (parity oscillation of entangled state) ✅
Near-Field Quantum Control microwave gates
4 Connectivity / transport
— undisclosed — exists, nothing published ◌ 🔎
connectivity not published
5 Control
Chip-integrated microwave control (ions) · primary ▣ Fig. 1 (electrode configuration around the trap centre, integrated microwave conductor) ✅
chip-integrated microwave; on-chip microwave
6 Readout
Fluorescence state detection (ions, defects) · primary ▤ §Results and discussion (fluorescence detection on the closed-cycle transition, 400 µs) ✅
fluorescence (family-determined)
7 Code
— none — nothing in this layer ▨ 🔎
no QEC code; none
8 Decoder
— none — nothing in this layer ▨ 🔎
no decoder; none
9 Interconnect
— none — nothing in this layer ◌ 🔎
monolithic single module, no interconnect
10 Manufacturing
Ion-trap fabrication (surface-electrode chips; machined 3D blade traps) · primary ▤ §Results and discussion (trap fabricated at PTB cleanroom, single-layer method, AlN substrate, ~10 µm Au, 5 µm gaps) ✅
CMOS-compatible manufacturing of the NFQC trap chips
evidence: ✅ 6 / 10