2-D site-resolved ion simulator
Tsinghua University (Duan group)
2-D site-resolved ion simulator
Register profile — the machine's variant of its architecture
qubit type: hyperfine qubit
gate mechanism: global laser-driven spin-spin coupling - an analog Ising simulator, not a gate-model machine
connectivity: static 2-D Coulomb crystal with power-law all-to-all coupling and no transport
control: global free-space laser drive
control placement: room-temp + free-space optics
readout: site-resolved fluorescence imaging
gate evidence: no published figure
flags: analogue operation only
Technologies by layer — the machine's cell per layer
| 1 Qubit carrier | Trapped atomic ion · primary ▣ Fig. 1 (experimental setup and 2D ion crystals); §Stable trapping of 2D ion crystals ✅ 512 ions in a 2-D Coulomb crystal, ~300 used for quantum simulation (May 2024) |
| 2 Encoding | Hyperfine / clock-state qubit · primary ▣ Fig. 1b; main text (qubit encoding) ✅ 171Yb+ qubit in the 2S1/2 hyperfine levels |F=0,mF=0⟩ and |F=1,mF=0⟩ |
| 3 Gate mechanism | — (Atlas gap: ∅G-isinganalog) · primary ▤ Supp. §III Hamiltonian generated by 411 nm laser (A. Spin-dependent force; B. Ising model Hamiltonian) ✅ global laser-driven spin–spin coupling; analog Ising simulator in a 2-D ion crystal, not a gate-model machine |
| 4 Connectivity / transport | — (Atlas gap: ∅G-crystal) · primary ▣ Fig. 1 (2D ion crystals); Supp. §II Crystal configuration stability; Fig. S2 (image of 300-ion crystal) ✅ static 2-D Coulomb crystal, power-law all-to-all coupling (511 neighbours), no transport |
| 5 Control | Free-space laser addressing of ions (AOM/AOD beams) · primary ▤ Supp. §I.B Laser configuration; Fig. S1; Discussion 🔎 global free-space 411 nm beams (waists ~50×330 µm² and 42×380 µm²) cover the whole 2-D crystal; no individual addressing ('by integrating the 2D laser addressing' is future work) |
| 6 Readout | Fluorescence state detection (ions, defects) · primary ▤ Supp. §I.C Imaging system; Fig. S2 (site-resolved image of N=300 ions) ✅ site-resolved fluorescence imaging of the 2-D crystal (May 2024) |
| 7 Code | |
| 8 Decoder | |
| 9 Interconnect | |
| 10 Manufacturing | Ion-trap fabrication (surface-electrode chips; machined 3D blade traps) · primary ▤ Supp. §I.A Monolithic 3D ion trap; §I.D Trap parameters ✅ ion-trap fabrication (family-determined) Optical / mechanical assembly (lasers, vacuum, objectives) · alternate ▣ Fig. S1 (laser configuration); Supp. §I.C Imaging system ✅ room-temperature free-space optics assembly (family-determined) |
Standard records
connectivity degree → 511 neighbours · best (power-law all-to-all in a 2-D crystal)
May 2024 · source
evidence: ✅ 7 / 11