A two-panel figure. (a) A real scanning tunnelling micrograph (100 nm scale bar) of the processor core on silicon-28: two patterned gates, a single-electron-transistor (SET) charge sensor and the sites of two donor registers, 4P and 5P (four and five phosphorus atoms), each with one electron (e1, e2); (b) a measured charge-stability map versus the two gate voltages, with charge states, a detuning axis ε and the working point where an antenna drives electron and nuclear spin resonance (ESR, NMR). It is Figure S1 of 'An 11-qubit atom processor in silicon' by Hermann Edlbauer and co-authors. Gate voltages set the electron charge states of these atomically placed donors.“Fig. 5 — Figure S1: Basic operation of the 11-qubit atom processor via detuning gates. a, Scanning tunneling micrograph showing the core of the atom processor with the…” by Hermann Edlbauer et al., arxiv.org/abs/2506.03567, CC BY 4.0 (creativecommons.org/licenses/by/4.0/)
